PMEG4030EP_1
? NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 7 August 2009 9 of 13
NXP Semiconductors
PMEG4030EP
3 A low VF
MEGA Schottky barrier recti?er
8. Test information
The current ratings for the typical waveforms as shown in
Figure
9,
10,
11
and
12
are
calculated according to the equations: with IIFAV()=
IM
×δ
M
de?ned as peak current,
FAV()
at DC, and with I
IRMS
=
IM
×δ
RMS
de?ned as RMS current.
8.1 Quality information
This product has been quali?ed in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test quali?cation for discrete semiconductors
, and is
suitable for use in automotive applications.
9. Package outline
Fig 13. Duty cycle de?nition
=
t1
t2
P
t
006aaa812
duty cycle d
t1
t2
IRMS
=
I
Fig 14. Package outline SOD128
07-09-12
Dimensions in mm
1.1
0.9
0.22
0.10
0.6
0.3
5.0
4.4
4.0
3.6
1.9
1.6
2.7
2.3
1
2
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